parts2clean, 5 - 7 October 2021
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Devarnishing by electron beam technology

Logo Fraunhofer-Institut FEP


Fraunhofer-Institut FEP

Exhibitor details
Exhibitor details
Logo Devarnishing by electron beam technology

Product description

The Fraunhofer FEP will be exhibiting its electron beam technology as an alternative beam tool for devarnishing at the parts2clean.
Precise, selective devarnishing of layers from a substrate plays an important role in numerous industrial production processes. The manufacture of precision resistors, sensor fabrication, and production of electronic displays and monitors can be mentioned here as key examples. A typical job would be to etch operational electronic layers such as resists on plastic, ceramic, or glass substrates at the micron-scale in order to trim characteristics to the desired level, such as precise balancing of electrical resistances, setting sensor values, as well as defining the smallest units of operation. It is important during this step that devarnishing of the layer be as residue-free as possible while causing a minimum of thermal and mechanical stress to the carrier substrate, which can be a real challenge particularly in the case of plastics.
Beam tools offer crucial advantages here, as they provide the necessary accuracy without contacting the work piece during processing. The laser is a tool that has become standard in many fields of application. It ablates or blasts away the intended areas of the layer by intense inputs of pulsed energy. Fraunhofer FEP will be presenting the electron beam as an alternative beam process: Our scientists have been involved with the design and manufacture of suitable beam sources for many decades and develop tailored solutions for specific processing jobs jointly with clients.
Specialized properties of electron beam technology open up several important advantages compared to other processes for devarnishing layers.

In contrast to the laser, whose energy is quickly absorbed at the surface absorption of the electron beam takes place in the bulk of the layer.This enables the penetration depth of the beam to be exactly set according to layer thicknesses that are present.

Hall 9, Stand C31

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